中立双曲型时滞偏微分方程解振动的充要条件

本文讨论一类线性中立双曲型时滞微分方程解的振动性质，获得了其一切解振动的充要条件．     

Mechanisms of ion-beam-enhanced diffusion in amorphous silicon

We have investigated ion-beam-enhanced diffusion of Au in undoped and B doped amorphous Si. The diffusion coefficients depend linearly on ion flux and exibit an Arrhenius-like temperature dependence with an activation energy of 0.37 eV in the temperature range 200–350° C. Moreover the diffusivity is enhanced by a factor of 5 by B-doping at a concentration of 1×10²⁰ atoms/cm³. A similar enhancement is observed in thermal diffusion of Au which has an activation energy of 1.5 eV. On the basis of these results a model for the ion-beam-enhanced diffusion of Au is proposed where the high density of defects present in amorphous Si act as traps for the fast moving interstitial Au atoms. The effectiveness of this trapping process can be changed by the high concentration of mobile defects generated by the beam and also by a change in the charge state of the traps induced by the presence of B.     

Biomagnetic measurements utilising a superparamagnetic marker: a feasibility study

Summary A preliminary study is here reported on a new potential marker for biomagnetic measurements. The marker consists of superparamagnetic polymer microspheres which were detected in the presence of external steady magnetic fields by means of an r.f.-SQUID magnetometer. The particles were prepared in samples differing in the concentration value and immersed in a homogeneous magnetic field of variable intensity. A simple model was taken into account for the distribution of the microspheres in the samples, so that the theoretical values were compared to the marker field values measured by the biomagnetic sensor. The overall sensitivity of the experimental apparatus and the minimum concentration value of the marker were then estimated.     

TiVI真空紫外光谱

用1m法向入射光谱仪观察三电极真空火花发射的Ti五次离化光谱。在24～200nm波段内观察到157条TiVI的新谱线。根据新归属的TiVI谱线定出11个新能级,并对5个有疑问的能级值作了修正。     

COMPLETE EXTREMAL SURFACES OF MIXED TYPE IN 3-DIMENSIONAL MINKOWSKI SPACE

ＣＯＭＰＬＥＴＥＥＸＴＲＥＭＡＬＳＵＲＦＡＣＥＳＯＦＭＩＸＥＤＴＹＰＥＩＮ３－ＤＩＭＥＮＳＩＯＮＡＬＭＩＮＫＯＷＳＫＩＳＰＡＣＥ￥ＧＵＣＨＡＯＨＡＯ（ＩｎｓｔｉｔｕｔｅｏｆＭａｔｈｅｍａｔｉｃｓ，ＦｕｄａｎＵｎｉｖｅｒｓｉｔｙ，Ｓｈａｎｇｈａｉ２００...     

时分复用倍乘光脉冲重复率的新型光纤耦合器环状连接法分析

提出并详细分析了一种基于时分复用技术倍乘光脉冲重复率的方法：在２×２光纤耦合器的一个输入口与一个输出口间，接入时延为脉冲列半周期奇数倍的一段光纤使之形成环状连接循环耦合，而在另一输出口获得光脉冲。详细分析了该系统中光纤耦合器耦合比、插入损耗、时延光纤长度的要求，偏差的影响及其调节法，给出了理论公式、结果的计算机模拟与实验介绍；与经典的马赫陈德尔干涉仪接法及近年提出的Ｓａｇｎａｃ环接法进行了比较。该方法特别适用于对窄脉冲列进行串接复用实现重复率的多次倍乘，从而得到数千兆赫至上百千兆赫的高重复率光脉冲     

Quantum HeisenbergS=1/2 spin glass with ferromagnetic coupling and random Dzyaloshinskii-Moriya interactions

By means of the generalized static replica symmetric spin glass theory, a quantum HeisenbergS=1/2 spin glass model with the infinite-ranged random Dzyaloshinskii-Moriya (DM) interaction and ferromagnetic coupling is investigated. The dependence of entropy, specific heat, susceptibility and the corresponding order parameters on temperature is studied numerically for different ferromagnetic interactions and fixed anisotropy. Two spin glass phases has been found including transverse and mixed spin glass phases. It has been shown that the local susceptibility exhibits double-cusp features for different ferromagnetic coupling (J ₀). Phase transition poins are found in the specific heat-temperature plane at various ferromagnetic coupling values. Additionally, the dependence of the spontaneous moment on temperature is calculated.     

The steady state growth rate of a recrystallization front in regions of heterogeneous dislocation density

The paper investigates whether a change from a homogeneous to an inhomogeneous dislocation distribution, assumed to be caused by a slight additional deformation, can lead to an increase of the recrystallization temperature of a deformed metal. In this case, the higher temperature would indicate a more stable deformation structure despite the increase of stored energy. The recrystallization temperature is related to the growth rate. Hence, the steady state velocity of a recrystallization front moving either parallel or vertically to the stripes of a simplified two-dimensional heterogeneous dislocation distribution of parallel sections of higher and lower dislocation densities is calculated. The results show that if a front growths through the high and low density sections in series an overall slower rate despite higher mean dislocation density is, indeed, possible. However, growing in the parallel arrangement always leads to a higher growth rate compared with the homogeneous case of slightly less stored energy. Since in a real structure the faster growth is likely to succeed, the recrystallization temperature observed will be lowered with additional deformation in accordance with experimental experience.